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O: Fachverband Oberflächenphysik
O 46: 2D semiconductors and van der Waals heterostructures IV (joint session HL/DS/O)
O 46.7: Vortrag
Dienstag, 17. März 2020, 15:30–15:45, POT 81
Dirac physics in honeycomb semiconductors — •Christiaan Post1, Nathali Franchina Vergel2, Tomas Meerwijk1, Jesper Moes1, Xavier Wallart2, Guillaume Fleury3, Ludovic Desplanque2, Ingmar Swart1, Christophe Delerue2, Bruno Grandidier2, and Daniel Vanmaekelbergh1 — 1Debye Institute for Nanomaterials Science, Utrecht, The Netherlands — 2Institute of Electronics, Microelectronics and Nanotechnology (IEMN), Lille, France — 3Laboratory for Chemistry of Organic Polymers (LCPO), Bordeaux, France
III-V semiconductor quantum wells have obtained a central place in advanced logics and opto-electronics. In more recent research, the effects of a nano scale geometry forming a periodic scattering potential in the lateral directions of the quantum well have been discussed and calculated. In case of a nano-scale honeycomb geometry, Dirac cones are formed similar as for graphene, creating massless fermions while the semiconductor quantum well band gap remains nearly unaltered.
In this research, we report on the electronic characterization of a modulated InGaAs quantum well with a honeycomb symmetry. The honeycomb symmetry is fabricated by perforating the quantum well with a triangular symmetry using nano-scale lithography. By performing scanning tunneling microscopy experiments, the electronic properties of the sample are intensively investigated, showing the combined electronic properties of a two-dimensional material and Dirac-like features. Muffin-tin calculations support the obtained experimental results, revealing the exciting properties of these novel materials.