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O: Fachverband Oberflächenphysik
O 47: Poster Session - 2D Materials: Electronic Structure, Excitations, etc.
O 47.5: Poster
Dienstag, 17. März 2020, 18:15–20:00, P2/EG
Modification of 2D materials by ultra-low energy ion implantation — •Manuel Auge1, Michael Hennessy2, Ursel Bangert2, and Hans Hofsäss1 — 1II. Institute of Physics, Georg-August-University Göttingen, 37077 Göttingen, Germany — 2Bernal Institute, University of Limerick, Limerick, Ireland
A new group of direct semiconductors are monolayer transition metal dichalcogenides (ML TMDs) of the form MX2 (M = transition metal and X = chalcogen). The high interest in ML TMDs is based on their promising applications in nanoelectronics and photonics [1]. In order to exploit the great potential of the material, it is important to develop a controllable method for modifying the physical properties.
In our study, a unique mass selected ion beam deposition system is used to incorporate low energy ions into two dimensional (2D) lattices. Therefore, a 30 keV ion beam is decelerated in a UHV-chamber down to energies as low as 10 eV. A beam sweep ensures a uniform profile over an area of 1 cm2 up to 2.5 cm2. Here, we demonstrate the successful incorporation of Cr into the MoS2 lattice. The integration of Cr could be verified by energy-dispersive X-ray spectroscopy (EDX) as well as by core loss electron energy loss spectroscopy (EELS). In addition, low loss EELS enables the investigation of the doping effect on the band gap of the material. Financial support by the Volkswagen Stiftung is gratefully acknowledged.
[1] K.F. Mak et al., Phys. Rev. Lett. 105, 136805 (2010)