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O: Fachverband Oberflächenphysik
O 59: 2D semiconductors and van der Waals heterostructures V (joint session HL/DS/O)
O 59.7: Vortrag
Mittwoch, 18. März 2020, 11:30–11:45, POT 81
ultraviolet photodetectors based on mechanically exfoliated few-layer FePS3 and ZnO quantum dots with high responsivity — •juanmei duan1,2, liang hu3, yujia zeng3, manfred helm1,2, shengqiang zhou1, and slawomir prucnal1 — 1Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, D-01328 Dresden, Germany — 2Technische Universität Dresden, D-01062 Dresden, Germany — 3College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China
Metal-phosphorus-trichalcogenides (MPTs), FePS3, are newly developed 2D wide-bandgap semiconductors and have been proposed as excellent candidates for ultraviolet (UV) optoelectronics. In this work, few-layer FePS3/ZnO quantum dots heterojunction were studied with Transmission electron microscopy (TEM), scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS), and Raman measurement. The photoresponse characteristic of UV detectors based on FePS3/ZnO were investigated under 365nm, 405nm illumination and bias voltages. The high photoresponse property paves the way for the further development of 2D MPTs/ZnO quantum dots in high-performance UV photodetectors.