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O: Fachverband Oberflächenphysik

O 72: Scanning Probe Techniques I: STM-ESR and Method Development (joint session O/CPP)

O 72.10: Vortrag

Mittwoch, 18. März 2020, 17:15–17:30, TRE Ma

Integrated Electrodes in H:Si(001) for Scanning Gate Microscopy — •Matthias Koch, Alex Kölker, Leonid Shupletsov, Takashi Kumagai, and Martin Wolf — Fritz-Haber-Institut der Max-Planck-Gesellschaft, Berlin, Germany

Single atoms or molecules can not only be characterized but also manipulated by exploiting the incredible high spatial resolution of the scanning tunneling microscopy. However, often the electrical characterization is limited by the experimental setup which consists of only two electrodes (tip and sample). Although multi-tip setups or scanning gate microscopes exist their operation is often demanding [1].

Here, we demostrate a sample system, compatible to most commercial low-temperature SPMs, equipped with multiple integrated electrodes. These in-plane electrodes, which are in close proximity to the surface, act as drain or gate contacts. We realize the *m-large electrodes by ultra-shallow ion-implantation in an otherwise highly resistive silicon crystal [2]. Notably, even after high-temperature treatment to prepare atomically flat silicon, the electrodes behave ohmic. The optimal distance between two electrodes is determined by in-situ transport measurements. Furthermore, the applicability of our sample system is demonstrated by first gating experiments. In future it will be used to study lateral nano-circuits in-operando with the SPM tip as a mobile electrode.

[1] B. Voigtländer et. Al, Rev. Sci. Instrum. 89, 101101 (2018)

[2] A.N. Ramanayaka et. al Scientific Reports 8, 1 (2018)