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O: Fachverband Oberflächenphysik

O 77: Poster Session - 2D Materials: Stacking and Heterostructures

O 77.5: Poster

Mittwoch, 18. März 2020, 18:15–20:00, P2/EG

Towards high mobility graphene field effect transistors with ultraclean exposed surface ensuring scanning probe compatibility — •Rosen Sofroniev, Yanting Liu, Tjorven Johnsen, Sayanti Samaddar, and Markus Morgenstern — II. Institute of Physics B, RWTH Aachen University and JARA-FIT, Otto-Blumenthal-Str., 52074 Aachen, Germany

Providing large, clean surfaces of gated graphene and other 2D materials is the key challenge for investigating them by Scanning tunnelling spectroscopy (STS). Most of the fabrication processes that have resulted in exceptionally high mobility devices yet, have targeted transport measurements such that the 2D material is encapsulated or the surface cleanliness is not ensured. In this work, we assemble boron nitride/graphene stacks with a graphite back-gate on SiO2/Si substrate, with all contacts realized prior to the graphene transfer i.e. we transfer the graphene as the last step over a centrally placed graphite (gate)/hBN stack and two neighbouring contacted graphite flakes on either side that would serve as source and drain electrode. The final PMMA based dry transfer, ensures clean surfaces free of any resist and the possibility of parallel probing by STS and electronic transport at low temperature. In future application, this technique would allow transfer of air sensitive 2D material inside argon glove boxes.