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O: Fachverband Oberflächenphysik
O 80: Poster Session - Graphene: Adsorption, Intercalation and Doping
O 80.1: Poster
Mittwoch, 18. März 2020, 18:15–20:00, P2/EG
Low-energy ion implantation of Cobalt in graphene investigated by scanning tunneling microscopy — •Anna Sinterhauf1, Manuel Auge2, Felix Junge2, Philip Willke3, Hans Hofsäss2, and Martin Wenderoth1 — 1IV. Physikalisches Institut, Universität Göttingen, Germany — 2II. Physikalisches Institut, Universität Göttingen, Germany — 3Center for Quantum Nanoscience, Institute for Basic Science (IBS), Republic of Korea
To tailor the properties of a graphene sheet by band structure engineering, the issue of doping is decisive to turn graphene into a true device material. For this purpose, a direct incorporation of foreign atoms into the graphene layer by low-energy ion beam implantation has shown to be a versatile method [1] as demonstrated for B and N. Here, we report on the successful implantation of Cobalt atoms into the graphene lattice achieved by low-energy Cobalt implantation at an ion energy of 20eV. After transfer through air, reinsertion into UHV and annealing at 400∘C for 30 minutes, the structural and electronic properties of the ion implanted epitaxial graphene are investigated by scanning tunneling microscopy and spectroscopy (STS). Contrary to B and N [1], we find a negligible charge transfer from Co to graphene in agreement with theoretical considerations [2]. In addition, at the topographic position of the defects, STS reveals a pronounced peak in dI/dV-spectra at zero bias voltage. Financial support by the DFG through project We 1889/13-1 is gratefully acknowledged.
[1] P. Willke et al., Nano Lett. 15(8), 5110-5115, 2015
[2] E. J. G. Santos et al., Phys. Rev. B 81, 125433, 2010