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O: Fachverband Oberflächenphysik
O 89: Poster Session - Oxide and Insulator Surfaces: Structure, Epitaxy and Growth
O 89.5: Poster
Mittwoch, 18. März 2020, 18:15–20:00, P2/1OG
Epitaxial growth of RuO2(110) thin films on TiO2(110) substrates by pulsed-laser-deposition — •Philipp Kessler, Matthias Schmitt, Berengar Leikert, Philipp Schütz, Martin Kamp, Michael Sing, Ralph Claessen, and Simon Moser — Experimental Physics IV, Julius Maximilian University of Würzburg
Ruthenium dioxide (RuO2) is a functional semimetal hosting a network of Dirac nodal lines in its bulk and a flat band state at its surface. For spectroscopic and transport measurements on this material, stoichiometric films of high crystalline quality and well-ordered surfaces are needed. Here we present a growth study of rutile RuO2(110) thin films on TiO2(110) substrates by pulsed-laser-deposition. In situ growth monitoring by RHEED in combination with ex situ characterization based on LEED, XPS, AFM and STEM reveal defect free epitaxial films up to 10 unit cells thickness, limited by formation of volatile species at the surface. Strategies to overcome this thickness limitation will be outlined.