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O: Fachverband Oberflächenphysik
O 93: Surface Magnetism (joint session MA/O)
O 93.5: Vortrag
Donnerstag, 19. März 2020, 10:45–11:00, HSZ 101
Doping graphene with substitutional manganese atoms — •Renan Villarreal1, Pin-Cheng Lin1, Harsh Bana1, Maya N. Nair2, Ken Verguts3,4, Steven Brems4, Stefan De Gendt3,4, Manuel Auge5, Hans Hofsäss5, Chris Van Haesendonck1, and Lino M. C. Pereira1 — 1Quantum Solid-State Physics, KU Leuven, 3001 Leuven, Belgium — 2CUNY Advanced Science Research Centre, 85 St. Nicholas Terrace, New York, N.Y. 10031, USA — 3Departement Chemie, KU Leuven, 3001 Leuven, Belgium — 4Interuniversitair Micro-electronica Centrum (imec), vzw, 3001 Leuven, Belgium — 5II. Institute of Physics, University of Göttingen, Göttingen 37077, Germany
Several approaches have been explored for the functionalization of 2D materials: the use of different substrates, creation of intrinsic defects, adsorption and intercalation, substitutional doping, among others. For incorporation of substitutional dopants, a major challenge remains: the limited control over the concentration and form of incorporation. An alternative approach is to incorporate the foreign species by ultra-low energy (ULE) ion implantation, precisely tuning the number of implanted ions and their kinetic energy. Here, we demonstrate that it is possible to controllably incorporate manganese (Mn) in graphene as a substitutional dopant using ULE ion implantation. Our approach is based on a wide range of characterization techniques, including STM/STS, synchrotron-based XPS, ARPES, XMCD, transport measurements and Raman spectroscopy. These experimental studies are complemented by DFT and MD calculations.