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TT: Fachverband Tiefe Temperaturen
TT 27: Topological Semimetals 2
TT 27.4: Vortrag
Dienstag, 17. März 2020, 14:45–15:00, HSZ 103
Anisotropic magnetoresistance and the planar Hall effect in antiperovskite thin films — •Dennis Huang1, Hiroyuki Nakamura2, and Hidenori Takagi1, 3, 4 — 1Max Planck Institute for Solid State Research, 70569 Stuttgart, Germany — 2University of Arkansas, Fayetteville, Arkansas 72701, USA — 3University of Stuttgart, 70569 Stuttgart, Germany — 4University of Tokyo, 113-0033 Tokyo, Japan
Anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE) have garnered increasing attention as probes of the chiral anomaly in Dirac and Weyl semimetals, or helical surface states in topological insulators. However, these techniques are sensitive to additional effects, such as orbital magnetoresistance, and a more detailed understanding of such contributions is needed. Here, we measure AMR and the PHE in thin films of the antiperovskite Sr3SnO grown by molecular beam epitaxy. Sr3SnO is predicted to host both massive 3D Dirac fermions and topological surface states protected by mirror symmetry. We investigate the dependence of AMR and the PHE on magnetic field, temperature and film thickness, as well as their relationship to weak (anti)localization.