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TT: Fachverband Tiefe Temperaturen

TT 47: Poster Session Correlated Electrons 2

TT 47.5: Poster

Mittwoch, 18. März 2020, 15:00–19:00, P2/3OG

Strain engineering of the Mott material LaTiO₃ — •Berengar Leikert¹, Julia Küspert¹, Martin Stübinger¹, Matthias Schmitt¹, Judith Gabel², Tien-Lin Lee², Michael Sing¹, and Ralph Claessen¹ — ¹Physikalisches Institut and Würzburg-Dresden Cluster of Excellence ct.qmat, Universität Würzburg, 97074 Würzburg — ²Diamond Light Source Ltd., Didcot, Oxfordshire OX11 0DE

3d transition metal oxides exhibit fascinating phenomena - absent in conventional semiconductors - like Mott insulating behaviour due to pronounced electron-electron interactions. The field of Mottronics dreams of harnessing the phase transition between the correlated metal and the Mott insulating phase of such strongly correlated materials for novel electronic devices.

We have recently demonstrated that the prototypical Mott insulator LaTiO₃ can undergo the band filling controlled Mott transition if it is chemically p-doped by excess oxygen during thin film growth by pulsed laser deposition [1]. Here we report on the influence of epitaxial strain. By using different substrates (GdScO₃, DyScO₃, LaAlO₃) we should be able to tune LaTiO₃ in the generic phase diagram (correlation strength versus band filling) from the Mott insulating phase towards the correlated metal phase [2]. Our goal is, exploiting strain and doping, to find an optimal spot in the phase diagram close to the boundary of the phase transition, where one might be able to trigger the phase transition with moderate electric fields.

[1] Scheiderer et al., Adv. Mater. 30, 1706708 (2018)

[2] Dymkowski et al. Phys. Rev. B 89, 161109 (2014)