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TT: Fachverband Tiefe Temperaturen

TT 58: Graphene I: Growth, Structure and Substrate Interaction (joint session O/TT)

TT 58.4: Vortrag

Donnerstag, 19. März 2020, 11:15–11:30, GER 37

Covalent functionalization of epitaxial graphene on cubic-SiC(001) — •Dmitrii Potorochin^1,2,3, Olga Molodtsova^1,2, Victor Aristov^1,4, Alexander Chaika⁴, Maxim Rabchinskii⁵, Marina Baidakova^2,5, Nikolai Ulin⁵, Pavel Brunkov^2,5, Dmitry Marchenko⁶, and Serguei Molodtsov^2,3,7 — ¹DESY, Hamburg, Germany — ²ITMO University, Saint Petersburg, Russian Federation — ³TU Bergakademie Freiberg, Freiberg, Germany — ⁴ISSP RAS, Chernogolovka, Russian Federation — ⁵Ioffe Institute RAS, Saint Petersburg, Russian Federation — ⁶Helmholtz-Zentrum Berlin, Berlin,Germany — ⁷European XFEL, Schenefeld, Germany

Some properties of graphene, although being unique, can serve as a deterrent factor to its use in some fields of technology. For instance, the bandgap absence complicates the fabrication of graphene-based logic elements of electronics. Furthermore, the transparency in the visible spectral region imposes a restriction on the use of graphene as an active material for elements of photonics (photodetectors, photovoltaics, etc.). Covalent functionalization of graphene is a promising approach to overcome such limitations. In the current report, we present an investigation of the electronic structure and morphology of epitaxial graphene on cubic-SiC(001) covalently modified by organic dyes. Results of high-resolution X-ray photoelectron spectroscopy (HR-XPS), photoemission electron microscopy (PEEM), and scanning tunneling microscopy (STM) studies are given. This work was supported by RAS, RFBR (Grant Nos. 17-02-01139, 17-02-01291), and Minobrnauki of Russia (Project 3.3161.2017/4.6).