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TT: Fachverband Tiefe Temperaturen
TT 65: Poster Session Topological Topics
TT 65.5: Poster
Donnerstag, 19. März 2020, 15:00–19:00, P2/EG
Electrical transport properties of Vanadium doped Bi2Te2.4Se0.6 — Christian Riha1, Birkan Düzel1, Karl Graser1, Olivio Chiatti1, Oliver Rader2, Jaime Sánchez-Barriga2, Oleg Tereshchenko3, and •Saskia F. Fischer1 — 1Novel Materials Group, Humboldt-Universität zu Berlin, 10099 Berlin, Germany — 2Helmholtz-Zentrum-Berlin für Materialien und Energie, 12489 Berlin, Germany — 3Physics Department, Novosibirsk State University, 630090 Novosibirsk, Russia
Magnetic doping of topological insulators is predicted to break the time reversal symmetry of the edge states and to cause the opening of a gap in the Dirac cone. This enables the observation of a transition from weak anti-localization to weak localization, as well as the occurrence of the anomalous quantum Hall effect. In this work, we investigate the transport properties of Vanadium doped Bi2Te2.4Se0.6 and measure the low-field magnetoresistance at temperatures down to T=0.3 K. All the samples show weak anti-localization and a hysteresis at low temperatures, which depends on the sweep-rate of the applied magnetic field.