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TT: Fachverband Tiefe Temperaturen

TT 65: Poster Session Topological Topics

TT 65.7: Poster

Donnerstag, 19. März 2020, 15:00–19:00, P2/EG

Mobility spectrum analysis on the topological insulator BiSbTeSe₂ — •Jimin Wang¹, Alexander Kurzendorfer¹, Lin Chen¹, Zhiwei Wang², Yoichi Ando², Yang Xu³, Ireneusz Miotkowski³, Yong P. Chen³, and Dieter Weiss¹ — ¹Institute of Experimental and Applied Physics, University of Regensburg, 93040 Regensburg, Germany — ²Physics Institute II, University of Cologne, Zülpicher Str. 77, 50937 Köln, Germany — ³Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47907, USA

We conducted mobility spectrum analysis on high quality 3D topological insulator BiSbTeSe₂ to extract mobility µ, and carrier density n. Top and bottom gates were applied to tune the carrier density independently on top and bottom surfaces. At 1.5 K, when the conduction is almost entirely dominated by the Dirac surface states, we always find two dominant conduction channels (top and bottom surfaces), with µ = 1000−3000 cm²/Vs, and n on the order of 10¹² cm⁻². However, at sufficiently high temperature (T= 85 K), when the bulk contributes, a third channel opens (µ ∼ 200 cm²/Vs, and n∼10¹² cm⁻²). Our analysis shows the feasibility of the method, which is also promising for similar material systems.