Hannover 2020 – wissenschaftliches Programm

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P: Fachverband Plasmaphysik

P 5: Poster Session 1

P 5.33: Poster

Montag, 9. März 2020, 16:30–18:30, Empore Lichthof

Research of the plasma parameters based on CHF3/H2 for etching silicon and glass — •Alena Okhorzina and Norbert Bernhard — 06366, German, Köthen, Bernburger Str. 55

In this work, dry maskless plasma silicon etching was used to reduce light reflection. That method is called "Black silicon" and it is applicable for any type of silicon (mono and multi). By creating a nanostructure on the silicon surface, light reflection was reduced. In this research CHF3-based gas was used because that type of gases has less global warming potential than other gases like SF6-based (standard black silicon process). By manipulating the main parameters of the plasma (flow and amount of gases, CCP and ICP power, pressure in the chamber) the changing of the light reflection and mass of the silicon wafers were observed. It was found that the main factors affecting the etching process in CHF3/H2 are pressure, CCP and ICP powers, and the amount of hydrogen in the gas mixture. The voltage-current characteristics were obtained for plasma etching with the most significant parameters. Langmuir cylindrical probe was used to understand the plasma process. During the experiment, the necessary parameters to hold the process in the etching mode of the plasma (potential, electron temperature, electron/ion current density) were obtained.