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Q: Fachverband Quantenoptik und Photonik

Q 13: Posters: Quantum Optics and Photonics I

Q 13.26: Poster

Montag, 9. März 2020, 16:30–18:30, Empore Lichthof

Influence of silicon dioxide layer on losses and switching behaviour of electro-optical modulators in LiNbO₃ — •Silia Babel, Felix vom Bruch, Christof Eigner, and Christine Silberhorn — Universität Paderborn, Warburger Str. 100, 33098 Paderborn

The transmission and encoding of information via glass fibers and electro-optical modulation is a well established technology.
Lately, quantum communication becomes more and more important. In order to be able to use classical modulators for quantum communication, these must be optimized according to novel system specifications. The optical losses caused by using the modulators have to be reduced, since qubits, in which the information is encoded, cannot be classically amplified. Furthermore, feed-forward schemes are essential ingredients for quantum communication, but due to their complexity not yet entirely released. To overcome this obstacle, the interplay and functionality between the different components has to be optimized and here, we concentrate on the switching behaviour of the required electro-optical modulators. The platform of choice is lithium niobate waveguide structures. They offer potentially low losses in combination with significantly faster switching behaviour compared to bulk modulators. This can be achieved by a smaller electrode gap, which allows lower switching voltages resulting in a decrease of the switching time.
The optical losses as well as the switching behaviour depend on the design of the electrodes. Therefore, in order to achieve faster and lower-loss electro-optical modulators, the losses caused by the electrodes and the switching are examined as a function of the buffer layer.