Hannover 2020 – scientific programme
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Q: Fachverband Quantenoptik und Photonik
Q 46: Nano-Optics (Single Quantum Emitters) II
Q 46.1: Talk
Thursday, March 12, 2020, 14:00–14:15, a310
Optical studies of silicon-vacancy color centers in phosphorus-doped diamond — •Florian Sledz1, Assegid M. Flatae1, Stefano Lagomarsino1, Navid Soltani1, Shannon S. Nicley2, Ken Haenen2, Robert Rechenberg3, Michael F. Becker3, and Mario Agio1 — 1Laboratory of Nano-Optics and Cμ, University of Siegen, Siegen, Germany — 2Institute for Materials Research (IMO) & IMOMEC, Hasselt University & IMEC vzw, Diepenbeek, Belgium — 3Fraunhofer USA Center for Coatings and Diamond Technologies, East Lansing, USA
A robust single-photon source operating upon electrical injection at ambient condition is desirable for quantum technologies. Silicon-vacancy (SiV) color centers in diamond are promising candidates as their emission is concentrated in a narrow zero-phonon line with a short excited-state lifetime of ~1 ns [1]. Creating the color centers in n-type diamond (phosphorus-doped) allows the implementation of a Schottky-diode configuration. This provides a simpler approach than the traditional complex diamond semiconductor junctions (e.g., p-i-n). We optically characterize SiV color centers in different phosphorus-doped diamond and show that the background due to doping, nitrogen impurities, and defects induced by Si-ion implantation can be significantly suppressed for single-photon emission [2]. This paves a way for the realization of the predicted bright electroluminescence of SiV color centers [3]. References: [1]. Lagomarsino et al, Diam. Relat. Mater. 84, 196 (2018). [2]. Flatae et al, manuscript in preparation (2019). [3]. Fedyanin and Agio, New J. Phys. 18, 073012 (2016).