Dortmund 2021 – scientific programme

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T: Fachverband Teilchenphysik

T 14: Pixel detectors I

T 14.1: Talk

Monday, March 15, 2021, 16:00–16:15, Tn

Development of MAPS in 65nm CMOS Imaging Technology — •Adriana Simancas, Simon Spannagel, Anastasiia Velyka, and Lennart Huth — Deutsches Elektronen-Synchrotron, Hamburg, Deutschland

Monolithic CMOS sensors have found their way through imaging technologies into High Energy Physics thanks to its multiple advantages in particle detection. Their main characteristic is the integration of the sensor and the readout in a single chip, which provides a reduction in production effort, costs and material. As part of the next generation of silicon pixel sensors that are usually employed as tracker and vertex detectors, a 65 nm CMOS sensor is being investigated at DESY. Device simulations (TCAD) are needed to develop the understanding of this technology and to obtain inputs for Monte Carlo simulations (Allpix²). The outcomes of these simulations can give an important insight into performance parameters of the sensor, which will be tested in experiments later on. This contribution will present the latest developments and simulation results of a 65 nm CMOS sensor.