Dortmund 2021 – scientific programme

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T: Fachverband Teilchenphysik

T 14: Pixel detectors I

T 14.6: Talk

Monday, March 15, 2021, 17:15–17:30, Tn

Inter-pixel resistance measurements of passive CMOS sensors — •Sinuo Zhang, David-Leon Pohl, Tomasz Hemperek, and Jochen Dingfelder — Physikalisches Institut, University of Bonn, Nussallee 12, 53115 Bonn, Germany

Using commercial CMOS chip fabrication lines, the so-called "passive CMOS" pixel and strip sensors have become an interesting alternative to standard planer sensors. To achieve and maintain a high spatial resolution for operating in HEP experiment facilities with high radiation levels, it is important to understand how the resistance between electrodes changes after irradiation for various implant geometries. We present results on the measurements of the inter-pixel resistance of n-on-p passive CMOS sensor test-structures fabricated in the LFoundry 150nm CMOS technology. The inter-pixel resistance of two types of test-structures: 1) p-stop isolation and 2) field plate between pixel implants, were evaluated by fitting the current-voltage behavior between a single pixel and the surrounding pixels. Results from the samples after 14MeV proton irradiation reveal a drop of the inter-pixel resistance for both types of the structures, with respect to the un-irradiated samples. An improvement of the inter-pixel resistance has been observed after applying appropriate voltages on the inter-pixel field plate.