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T: Fachverband Teilchenphysik

T 14: Pixel detectors I

T 14.7: Vortrag

Montag, 15. März 2021, 17:30–17:45, Tn

Radiation hardness and development of a large electrode DMAPS design in a 150 nm CMOS process — •Ivan Caicedo, Christian Bespin, Jochen Dingfelder, Tomasz Hemperek, Toko Hirono, Fabian Hügging, Hans Krüger, Piotr Rymaszewski, Tianyang Wang, and Norbert Wermes — Physikalisches Institut, Universität Bonn. Bonn, Germany.

Monolithic CMOS active pixel sensors in depleted substrates (DMAPS) are an attractive development for pixel tracker systems in high-rate collider experiments. The radiation tolerance of these devices is enhanced through technology add-ons and careful design, which allow them to be biased with large voltages and collect charge through drift in highly resistive silicon bulks.

LF-Monopix1 is the first DMAPS with a fully functional column-drain readout architecture. It was designed in a 150 nm CMOS process that made it possible to place and isolate each pixel’s front-end circuitry within a charge collection electrode of a size comparable to the pixel area. This talk will summarize the chip performance and focus on its radiation hardness. Measurements on irradiated samples showed an in-time detection efficiency of ∼ 97% after a NIEL dose of 1×10¹⁵ n_eq /cm². In addition, their gain did not degrade and their noise increased by 25% after a TID dose of 100 MRad from X-rays.

In the end, an overview and initial test results of the new prototype chip LF-Monopix2 with increased column length, reduced pixel pitch and design changes motivated by measurement results will be given.