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16:00 |
T 14.1 |
Development of MAPS in 65nm CMOS Imaging Technology — •Adriana Simancas, Simon Spannagel, Anastasiia Velyka, and Lennart Huth
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16:15 |
T 14.2 |
Development of a Monolithic Pixel Sensor with sub-nanosecond Time Resolution in BiCMOS — Heiko Augustin, Ivan Peric, André Schöning, and •Benjamin Weinläder
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16:30 |
T 14.3 |
Study of current, capacity and thermal runaway of hadron-irradiated silicon sensors — Ingo Bloch, Heiko Lacker, •Felix Riemer, and Christian Scharf
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16:45 |
T 14.4 |
Evolution of currents in irradiated DEPFET sensors — •Marike Schwickardi, Ariane Frey, Benjamin Schwenker, Botho Paschen, Georgio Giakoustidis, and Harrison Schreeck
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17:00 |
T 14.5 |
Characterization of a depleted monolithic active pixel sensor in 180 nm TowerJazz technology — Ivan Berdalovic, •Christian Bespin, Ivan Caicedo Sierra, Tomasz Hemperek, Toko Hirono, Fabian Hügging, Hans Krüger, Thanusan Kugathasan, Cesar Augusto Marin Tobon, Konstantinos Moustakas, Heinz Pernegger, Walter Snoeys, Tianyang Wang, Norbert Wermes, and Jochen Dingfelder
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17:15 |
T 14.6 |
Inter-pixel resistance measurements of passive CMOS sensors — •Sinuo Zhang, David-Leon Pohl, Tomasz Hemperek, and Jochen Dingfelder
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17:30 |
T 14.7 |
Radiation hardness and development of a large electrode DMAPS design in a 150 nm CMOS process — •Ivan Caicedo, Christian Bespin, Jochen Dingfelder, Tomasz Hemperek, Toko Hirono, Fabian Hügging, Hans Krüger, Piotr Rymaszewski, Tianyang Wang, and Norbert Wermes
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17:45 |
T 14.8 |
CAD Simulation and Testbeam characterization studies of High-Voltage Monolithic Active Pixel Sensors — •Annie Meneses Gonzalez on behalf of the HV-MAPS consortium
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18:00 |
T 14.9 |
Radiation tolerant small-pixel passive CMOS sensors with RD53A readout — •Yannick Dieter, Michael Daas, Tomasz Hemperek, Fabian Hügging, Jens Janssen, Hans Krüger, David-Leon Pohl, Tianyang Wang, Norbert Wermes, Pascal Wolf, and Jochen Dingfelder
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