Dortmund 2021 – scientific programme

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T: Fachverband Teilchenphysik

T 35: Semiconductor Detectors - Radiation Hardness, New Materials and Concepts

T 35.4: Talk

Tuesday, March 16, 2021, 16:45–17:00, Tj

TPA-TCT: Two Photon Absorption - Transient Current Technique — •Moritz Wiehe^1,2, Marcos Fernandez Garcia^1,3, Michael Moll¹, Raul Montero⁴, F.R. Palomo⁵, and Ivan Vila³ — ¹CERN, Route du Meyrin 285, CH-1211 Genève 23, Switzerland — ²Albert-Ludwigs-Universität Freiburg, Physikalisches Institut, Hermann-Herder-Str. 3, 79104 Freiburg, Germany — ³Instituto de Física de Cantabria (CSIC-UC), Avda. los Castros s/n, E-39005 Santander, Spain — ⁴UPV/EHU, Sarriena, s/n- 48940 Leioa-Bizkaia, Spain — ⁵Escuela Técnica Superior de Ingenieros, US, Avda. de los Descubrimientos s/n, 41092, Isla de la Cartuja, Sevilla, Spain

The Transient Current Technique (TCT) is a very important tool for characterization of unirradiated and irradiated silicon detectors. In recent years a novel method, the Two Photon Absorption - Transient Current Technique (TPA-TCT), based on the charge carrier generation by absorption of two photons, was developed. TPA-TCT proved to be very useful in 3D characterization of silicon devices with unprecedented spatial resolution. Currently the first compact TPA-TCT setup is under development at CERN. After a revision of the laser system, commissioning is now in the final stage. The current status of the setup and first measurements are presented.