Dortmund 2021 – scientific programme

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T: Fachverband Teilchenphysik

T 35: Semiconductor Detectors - Radiation Hardness, New Materials and Concepts

T 35.7: Talk

Tuesday, March 16, 2021, 17:30–17:45, Tj

Boron removal effect in silicon sensors — •Chuan Liao, Erika Garutti, Joern Schwandt, Eckhart Fretwurst, and Annika Vauth — Institut für Experimentalphysik, Universität Hamburg, Luruper Chaussee 149, 22761 Hamburg, Deutschland

Silicon detectors are widely used devices for radiation detection. In high energy physics experiments, for example in the inner region of hadron collider experiments, radiation can induce damage in silicon materials. Depending on the type of radiation, the main effect is so-called displacement damage. In the frame of the CERN RD50 collaboration the acceptor removal effect in Low Gain Avalanche Detectors (LGADs) is investigated. The suspected cause is the displacement of substitutional Boron (Bs), being negatively charged, by incident particles or other recoil atoms into an interstitial position (Bi). This is followed by Bi migration and being captured by Oxygen atoms and forming complex defects of interstitial Boron and interstitial Oxygen (BiOi) with positive charge. This is the boron removal effect. For lower radiation fluence, this has one main consequence: The maximum electric field at a given reverse bias will decrease, causing a decrease of the LGAD gain. In this presentation, the setup of experiments for investigating boron removal effect is presented including C-V, I-V, and Thermally stimulated current (TSC). And several properties of BiOi defect given by measured results have also been shown including activation energy, capture cross-section, defect concentration, annealing behavior as well as generation rate of BiOi.