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T: Fachverband Teilchenphysik

T 60: Silicon Strip Detectors I

T 60.4: Vortrag

Mittwoch, 17. März 2021, 16:45–17:00, Tj

Testbeam studies of passive CMOS strip sensors — Marta Baselga¹, Leena Diehl², Ingrid-Maria Gregor^1,3, Tomasz Hemperek³, Jan Cedric Hönig², Ulrich Parzefall², Arturo Rodriguez², •Surabhi Sharma¹, Dennis Sperlich², Tianyang Wang³, and Liv Wiik-Fuchs² — ¹Deutsches Elektronen-Synchrotron DESY, Hamburg — ²Physikalisches Institut Albert-Ludwigs-Universität Freiburg, Freiburg im Breisgrau — ³Universität Bonn, Bonn, Germany

Future particle physics experiments are motivated by the increase in luminosity and thus the need for intelligent tracking detectors. The next generation tracking detectors are mostly all silicon detectors and thus finding a cost effective solution to maximise the output is important. A recent R&D project is using CMOS technology for silicon strip sensors, which allows large and high-resistive wafers at low cost, making them a prime candidate. Also since CMOS is the commercially fabricated process it provides the advantage of easier production. In this contribution, the test beam measurements at DESY test beam facilities of novel passive unirradiated CMOS silicon strip sensors developed by the ATLAS Collaboration are presented. The sensor is processed by LFoundry on a 150 µm thick wafer, employing a 150 nm CMOS technology and has three different strips design to study. The strip sensors are designed in two different lengths, formed by stitching of individual reticles. The main focus of this test beam measurement is to study the charge collection by the sensor and examine the performance of the stitching.