Dortmund 2021 – wissenschaftliches Programm
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T: Fachverband Teilchenphysik
T 60: Silicon Strip Detectors I
T 60.6: Vortrag
Mittwoch, 17. März 2021, 17:15–17:30, Tj
Investigation of irradiated silicon strip sensors using the Transient Current Technique — •Nicky Potters1, Christian Scharf2, Heiko Lacker2, and Ingo Bloch3 — 1Ruprecht-Karls-Universität Heidelberg, Heidelberg, Germany — 2Humboldt-Universität zu Berlin, Berlin, Germany — 3Deutsches Elektronen-Synchrotron (DESY), Zeuthen, Germany
A new edge-TCT setup has been built and commissioned at DESY Zeuthen. The setup allows for charge injection at defined depths or at the surfaces of silicon sensors in order to study the detector response (e.g. its charge collection properties).
ATLAS ITk mini strip sensors from the ATLAS17LS prototyping submission have been investigated using red and infrared laser light with 100 ps pulse width and a minimum beam diameter of ω0 = 7 µm. The current induced by the injected carriers is measured. Information on the electric field can be extracted from the measurements as a function of the position in the sensors.
The sensors were irradiated with 70 MeVc protons to equivalent fluences from 1.0 · 1013 cm2 to 1.3 · 1016 cm2 and with 1 MeV neutrons from 4.0 · 1014 cm2 to 5.0 · 1016 cm2.
The position-dependent electric field has been determined by using a novel method of fitting the edge-TCT data.
Results of the commissioning of the setup using non-irradiated strip sensors as well as measurements of irradiated strip sensors will be presented.