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Q: Fachverband Quantenoptik und Photonik
Q 2: Nano-Optics and Optomechanics
Q 2.10: Poster
Montag, 20. September 2021, 16:30–18:30, P
Investigating and Improving the Quantum Efficiency of Defect Centers in hBN — •Pablo Tieben1,2, Bhagyesh Shiyani2, Nora Bahrami2, Hiren Dobarya2, and Andreas W. Schell1,2 — 1Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig — 2Institute for Solid State Physics, Leibniz University Hannover, Appelstr. 2, 30167 Hannover
Single photon emitters play a central role in the rapidly developing field of quantum technologies. Therefor new sources of single photons are highly sought after and understanding their properties is essential for their application in quantum technologies. Defect centers in hexagonal boron nitride (hBN) have become prominent candidates as single photon sources due to some of their highly favorable properties, like bright single photon emission, narrow line width, and high photo stability at room-temperature. Recently a spectral dependency on the excitation wavelength of the fluorescence of these emitters has been shown. In general, both the intensity and purity of the quantum emission, as well as the emission spectrum, vary with the excitation wavelength. By tuning the excitation over a broad range inside the visible spectrum and performing measurements regarding the quantum nature as well as the spectral decomposition of the emission light, we gain further insight to the characteristic properties and energy level schemes of these defect centers. In particular we find a strong dependency of the saturation behavior of individual emitters on the excitation wavelength and thus show, that the single photon emission of optically active defects in hBN has a tunable quantum efficiency.