SAMOP 2021 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
Q: Fachverband Quantenoptik und Photonik
Q 2: Nano-Optics and Optomechanics
Q 2.11: Poster
Monday, September 20, 2021, 16:30–18:30, P
Shallow implantation of color centers in silicon carbide with high-coherence spin-optical properties — •Timo Steidl1, Tobias Linkewitz1, Raphael Wörnle1, Charles Babin1, Rainer Stöhr1, Di Liu1, Erik Hesselmeier1, Naoya Morioka1, Vadim Vorobyov1, Andrej Denisenko1, Mario Hentschel1, Christian Gobert2, Patrick Berwian2, Georgy Astakhov3, Wolfgang Knolle4, Sridhar Majety5, Pranta Saha5, Marina Radulaski5, Nguyen Tien Son6, Jawad Ul-Hassan6, Florian Kaiser1, and Jörg Wrachtrup1 — 1Universität Stuttgart, Germany — 2Fraunhofer IISB, Erlangen, Germany — 3HZDR, Dresden, Germany — 4IOM, Leipzig, Germany — 5University of California, Davis, USA — 6Linköping University, Sweden
Next-generation solid-state quantum information devices require efficient photonic interfaces, e.g., as provided by cavity QED systems. This requires precise positioning of optically active color centers in the centre of such cavities. Here, we report the creation of shallow silicon vacancy centers in silicon carbide with high spatial resolution using implantation of protons, He ions and Si ions. We observe remarkably robust spin-optical properties, e.g., nearly lifetime limited absorption lines and the highest reported Hahn echo spin-coherence times of the system. We attribute these findings to the much lower ion energy used in our experiments (few keV), which minimizes collateral crystal damage. Our findings provide a significant step forward for the SiC platform.