Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

DS: Fachverband Dünne Schichten

DS 10: Focus Session: Highlights of Materials Science and Applied Physics III (joint session DS/HL)

DS 10.6: Vortrag

Freitag, 1. Oktober 2021, 12:30–12:45, H1

Homoepitaxial diamond lateral growth: a new methodology for the next generation of power devices — •Fernando Lloret¹, Daniel Araujo², David Eon³, and Etienne Bustarret³ — ¹Department of Applied Physics, University of Cádiz, 11510, Puerto Real (Cádiz) Spain — ²Department of Material Science, University of Cádiz, 11510, Puerto Real (Cádiz) Spain — ³Univ. Grenoble-Alpes, CNRS, Institut Néel, 38000 Grenoble, France

Diamond is expected to be the base material for future power electronic devices. However, the technological steps and the particularities inherent to the material remain impassable issues for its industrial implementation. Shortcomings such as the high density of substrate defects and small substrate sizes (less than 1 cm2), the large number of required non-fully-controlled technology steps (etch and deposition or growth) or electrical problems related to the classical geometries (high electric fields, leakages*) can be overcome by using lateral growth. The progress of this promising diamond deposition methodology, capable of drastically reducing defects density, promoting selective doping and providing a wealth of alternative geometries for the device, is here reviewed.