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11:15 |
DS 10.1 |
Free-Standing ZnSe-Based Microdisk Resonators - Influence of Edge Roughness on the Optical Quality and Degradation Reduction with Supported Geometry — •Wilken Seemann, Alexander Kothe, Christian Tessarek, Gesa Schmidt, Siqi Qiao, Nils von den Driesch, Jan Wiersig, Alexander Pawlis, Gordon Callsen, and Jürgen Gutowski
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11:30 |
DS 10.2 |
Pyramid formation by etching of InGaN/GaN quantum well structures grown on N-face GaN for nano optical light emitters — •Uwe Rossow, Savutjan Sidikejiang, Samar Hagag, Philipp Henning, Rodrigo de Vasconcellos Lourenco, Heiko Bremers, and Andreas Hangleiter
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11:45 |
DS 10.3 |
Bulk and interfacial effects in the Co/Ni x Mn 100−x exchange-bias system due to creation of defects by Ar + sputtering — •Tauqir Shinwari, Ismet Gelen, Yasser A. Shokr, Ivar Kumberg, Ikram Ullah, Muhammad Sajjad, M. Yaqoob Khan, and Wolfgang Kuch
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12:00 |
DS 10.4 |
Study of annealing effect on RF-sputtered Bi2Te3 thin films with full figure of merit characterization. — •Gyuhyeon Park, Maksim Naumochkin, Kornelius Nielsch, and Heiko Reith
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12:15 |
DS 10.5 |
Passivating polysilicon recombination junctions for crystalline silicon solar cells — •Franz-Josef Haug, Audrey Morisset, Philippe Wyss, Mario Lehmann, Aicha Hessler-Wyser, Andrea Ingenito, Quentin Jeangros, Christophe Ballif, Shyam Kumar, Santhana Eswara, and Nathalie Valle
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12:30 |
DS 10.6 |
Homoepitaxial diamond lateral growth: a new methodology for the next generation of power devices — •Fernando Lloret, Daniel Araujo, David Eon, and Etienne Bustarret
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12:45 |
DS 10.7 |
Impact of electrical current on single GaAs nanowire structure — •Ullrich Pietsch, Danial Bahrami, Ali AlHassan, Arman Davtyan, Taseer Anjum, Ren Zhe, Rainer Timm, Lutz Geelhaar, Jesus Herranz, and Dmiri Novikov
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