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DS: Fachverband Dünne Schichten

DS 4: Poster

DS 4.10: Poster

Dienstag, 28. September 2021, 10:00–13:00, P

Forming-free resistive switching in amorphous gallium oxide device — •Aman Baunthiyal¹, Jon-Olaf Krisponeit¹, Christian Habben¹, Alexander Karg¹, Martin Eickhoff¹, Sandra Pérez Domínguez², Manfred Radmacher², and Jens Falta¹ — ¹Institute of Solid State Physics, University of Bremen, Germany — ²Institute of Biophysics, University of Bremen, Germany

Currently, semiconductor based devices are reaching their limitations in terms of scalability and long time storage capability. To overcome this problem, inorganic and organic materials which show resistive switching (utilized in ReRAMs), magnetic switching (MRAMs), and phase change switching (PCRAMs) have been studied over the past 40 years. In ReRAMs, a repeatable switching between high resistive state (HRS) and low resistive state (LRS) can be observed when a voltage sweep is applied across an active layer sandwiched between two metal electrodes.

In this study, the forming-free bipolar resistive switching was observed in a Al/GaO_x(76 nm)/Ru devices. The observed switching was proposed to be connected to the formation and rupture of conductive filaments constituted by oxygen vacancies in the GaO_x film. X-ray photoelelectron spectroscopy (XPS) analysis confirmed the high amount of oxygen vacancies in the GaO_x film. The LRS was found to be of ohmic nature, while the HRS followed Poole-Frenkel emission model. Due to their stable endurance cycle and long retention time with more than 10³ order resistance ratio ,the devices can be regarded as promising prototypes for future non-volatile ReRAMs.