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DS: Fachverband Dünne Schichten

DS 4: Poster

DS 4.27: Poster

Dienstag, 28. September 2021, 10:00–13:00, P

Metal-insulator transition via ion irradiation in epitaxial La0.7Sr0.3MnO3-δ thin films — Lei Cao¹, Andreas Herklotz², Diana Rata², Chenyang Yin³, Oleg Petracic³, Ulrich Kentsch¹, Manfred Helm¹, and •Shengqiang Zhou¹ — ¹Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden, 01328, Germany — ²Institute of Physics, Martin Luther University Halle-Wittenberg, Halle, 06120, Germany — ³Jülich Centre for Neutron Science (JCNS-2) and Peter Grünberg Institut (PGI-4), JARA-FIT, Forschungszentrum Jülich GmbH Jülich, 52425, Germany

Complex oxides provide rich physics related to ionic defects. For the proper tuning of functionalities in oxide heterostructures, it is highly desired to develop fast, effective and low temperature routes for the dynamic modification of defect concentration and distribution. In this work, we report on the use of helium-irradiation to efficiently control the vacancy profiles in epitaxial La0.7Sr0.3MnO3-δ thin films. The viability of this approach is supported by the lattice expansion in the out-of-plane lattice direction and dramatic change in physical properties, i.e., a transition from ferromagnetic metallic to antiferromagnetic insulating. In particular, a significant increase of resistivity up to four orders of magnitude is evidenced at room temperature, upon irradiation by highly energetic He-ions. Our result offers an attractive means for tuning the emergent physical properties of oxide thin films, via strong coupling between strain, defects and valence.

The work at HZDR is supported by DFG (ZH 225/10-1).