SKM 2021 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 11: Focus Session: Functional Metal Oxides for Novel Applications and Devices

Dienstag, 28. September 2021, 13:30–16:30, H4

Metal oxides exhibit a myriad of fascinating physical properties that enable a large variety of potential applications such as sensors and detectors, solar energy harvesting, transparent and potentially bendable electronics, power electronics, high-electron-mobility transisitors, memristors, topological quantum computation and so on. These functionalities typically require homo- or heteroepitaxial layers of high crystallinity with bendable amorphous semiconducting oxides as an exception. This session sets a focus on growth of bulk and thin films, experimental and theoretical investigation of their physical properties as well as fabrication and characterization of demonstrator devices.

Organizers: Oliver Bierwagen (Paul-Drude-Institut für Festkörperelektronik, Berlin), Holger Eisele (TU Berlin), Jutta Schwarzkopf (Leibniz-Institut für Kristallzüchtung, Berlin) and Holger von Wenckstern (Universität Leipzig).

	13:30	HL 11.1	Hauptvortrag: Modulation Doping in High-Mobility Alkaline-Earth Stannates — •Bharat Jalan
	14:00	HL 11.2	Hauptvortrag: Ultrathin oxides on InGaN nanowires: Hybrid nanostructure photoelectrodes and optical analysis of chemical processes — P. Neuderth, J. Schörmann, M. Coll, M. de la Mata, J. Arbiol, R. Marschall, and •M. Eickhoff
	14:30	HL 11.3	Hauptvortrag: Doping and charge compensation mechanisms in semiconducting oxides — •Andreas Klein
	15:00	HL 11.4	Hauptvortrag: Oxide Memristors for edge computing and secure electronics — •Heidemarie Schmidt
	15:30	HL 11.5	Hauptvortrag: Integration of 33∘Y-LiNbO3 films with high-frequency BAW resonators — Sondes Boujnah, Mihaela Ivan, Vincent Astié, Samuel Margueron, Mario Constanza, Jean-Manuel Decams, and •Ausrine Bartasyte
	16:00	HL 11.6	Observation and control of improper ferroelectric nano-domains in Gd2(MoO4)3 — •Ivan Ushakov, Theodor Holstad, Didier Perrodin, Edith Bourret, and Dennis Meier
	16:15	HL 11.7	Electronic Raman scattering study of Ir4+ ions in beta-Ga2O3 — •Palvan Seyidov, Manfred Ramsteiner, Zbigniew Galazka, and Klaus Irmscher