SKM 2021 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 11: Focus Session: Functional Metal Oxides for Novel Applications and Devices

HL 11.3: Hauptvortrag

Dienstag, 28. September 2021, 14:30–15:00, H4

Doping and charge compensation mechanisms in semiconducting oxides — •Andreas Klein — Technical University of Darmstadt

Different charge compensation mechanisms are known for ionic solids. Among them are the formation of compensating defects such as electronic or ionic defects, the valence changes of atoms and the segregation of dopants. In principle, the introduction of positive charges by donor doping or reduction results either in the compensation by electrons, negatively charged intrinsic acceptors as metal vacancies, the reduction of a one of the species in the compound, or in the segregation of the dopant species. The situation is reversed for the addition of negative charges. While the different mechanisms are well-documented for different materials, predicting the prevailing compensation mechanism in a material is hardly possible. It is well known that the Fermi energy is determined by the defect concentrations but it is equivalent to describe the concentration of defects as a function of the Fermi energy. This enables a direct comparison of the different compensation mechanisms. The challenges in discriminating the different compensation mechanisms are discussed using the example of Sn-doped indium oxide.