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HL: Fachverband Halbleiterphysik

HL 11: Focus Session: Functional Metal Oxides for Novel Applications and Devices

HL 11.4: Hauptvortrag

Dienstag, 28. September 2021, 15:00–15:30, H4

Oxide Memristors for edge computing and secure electronics — •Heidemarie Schmidt — Leibniz-IPHT, Jena, Germany — Friedrich-Schiller-Universität Jena, Jena, Germany — Fraunhofer ENAS, Chemnitz, Germany

In the future, new hardware components will determine the power and strength of artificial intelligence and manchine learning. These components are called memristors [1]. The first memristor with unified analog data storage and information processing is the BiFeO3 (BFO) memristor. BFO is an electroforming-free, bipolar memristor and its potential has been shown in in-memory information processing [2], edge computing [3], and hardware cryptography. Another electroforming-free memristor is the unipolar memristor YMnO3 (YMO) [4]. In order to develop memristor technology and applications further, it is more than ever necessary to understand the underlying resistive switching mechanisms when a write voltage is applied. We discuss results from quasi-static test measurements on BFO [5] and from temperature dependent transport measurements on YMO [6]. [1] Leon Chua, IEEE Transactions on Circuit Theory 18, 507, 1971 [2] T. You et al., Adv. Funct. Mat. 24, 3357-3365, 2014. [3] N. Du et al., Front. Neurosci. 15, 660894, 2021. [4] H. Schmidt, 118, 140502, 2021. [5] N. Du et al., Phys. Rev. Applied 10, 054025, 2018. [6] V.R. Rayapati et al., J. Appl. Phys. 126, 074102, 2019.