SKM 2021 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 13: Poster Session III
HL 13.27: Poster
Tuesday, September 28, 2021, 13:30–16:30, P
CMOS back-end compatible Metal-Hf0.5Zr0.5O2-Al2O3-Metal ferroelectric tunnel junction devices for neuromorphic applications — •Keerthana Nair1,2, Marco Holzer1,2, Sourish Banerjee1, Catherine Dudourdieu1,2, and Veeresh Deshpande1 — 1Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin, Germany — 2Freie Universität Berlin, Physical Chemistry, Arnimallee 22, 14195 Berlin, Germany
Hf0.5Zr0.5O2 (HZO) ferroelectric layer provides an opportunity for CMOS back-end-of-line integrable devices owing to low crystallization temperature (around 400∘C). Ferroelectric tunnel junction (FTJ) memory devices based on HZO feature ultra-low power consumption and have potential for multiple resistance states necessary for neuromorphic applications. FTJ architecture based on the Metal-Ferroelectric-Dielectric-Metal stack allows high ON/OFF ratio with thicker ferroelectric layer ( 10-12nm). In this work, we demonstrate 400∘C-crystallized Metal-HZO-Al2O3-Metal FTJ architecture with TiN and W metals. Utilizing the coercive field distribution of the domains, we demonstrate multiple resistance states through partial switching operations and switching pulse-width modulations. The influence of cycling waveform on the ON/OFF ratio (which directly impacts achievable multiple resistance states) will be discussed. The intermediate resistance state stability will also be discussed. Our study also investigates the role of the process conditions, dielectric thickness and metal placement on attaining high ON/OFF ratio back-end compatible FTJ devices.