SKM 2021 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 19: Poster Session IV
HL 19.26: Poster
Donnerstag, 30. September 2021, 13:30–16:30, P
Thermal Conductivity Measurements in β-Ga2O3 Thin Films — •Robin Ahrling1, Olivio Chiatti1, Rüdiger Mitdank1, Zbigniew Galazka2, Andreas Popp2, and Saskia F. Fischer1 — 1Novel Materials Group, Humboldt-Universität zu Berlin, 10099 Berlin, Germany — 2Leibniz Institute for Crystal Growth, 12489 Berlin, Germany
As a wide-band gap semiconductor with a high breakthrough field, gallium oxide (Ga2O3) has shown to be a promising material for applications in high power electronics. However, due to the materials low thermal conductivity [1,2] heat dissipation is a challenge for future device applications. Therefore, it is crucial to investigate the thermal transport in Ga2O3 films. Electrical measurements have shown that in very thin films the scattering processes change drastically with decreasing film thickness [3]. In this work, we investigate the thermal conductivity in these thin films, using the 3-ω and 2-ω method.
A variation of the 3-ω method with sub µm heater widths, with heaters thinner than the thickness of the examined films, is used. The heaters are realized by electron beam lithography. We investigate the thermal conductivity in dependence of the temperature and the thickness of the Ga2O3 films, with a special interest in changes in the the phonon transport mechanisms in a quasi-ballistic phonon transport regime.
[1] M. Handwerg et al., Semicond. Sci. Technol. 30, (2015) 024006
[2] M. Handwerg et al., Semicond. Sci. Technol. 31, (2016) 125006
[3] R. Ahrling et al., Sci. Rep. 9, 13149 (2019).