SKM 2021 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 19: Poster Session IV
HL 19.5: Poster
Donnerstag, 30. September 2021, 13:30–16:30, P
Modification of epitaxial La0.6Sr0.3CoO3-δ thin films by ion irradiation — •Yunxia Zhou1,2, Lei Cao1, Andreas Herklotz3, Diana Rata3, Suqin He4, Felix Gunkel4, Ulrich Kentsch1, Manfred Helm1, and Shengqiang Zhou1 — 1Helmholtz-Zentrum-Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, D-01328 Dresden, Germany — 2University of Electronic Science and Technology of China, State Key Laboratory of Electronic Thin Films and Integrated Device, Xiyuan Ave 2006, 611731 Chengdu, China — 3Institute of Physics, Martin Luther University Halle-Wittenberg, Halle, 06120, Germany — 4Peter Grünberg Institut (PGI-7), JARA-FIT, Forschungszentrum Jülich GmbH, Jülich, 52425, Germany
Perovskite oxides exhibits rich physics related to ionic defects. In particular, defect concentration and distribution alter the lattice parameters and affect the competitive interplay between strongly correlated electrons, enabling numerous applications, including sensors, catalysts, and memristive devices. In this work, helium-implantation is demonstrated as a fast, low temperature tool to modulate the vacancy profiles in epitaxial La0.6Sr0.4CoO3-δ thin films. Not only a significant lattice expansion solely along the out-of-plane direction is observed, but also a distinct change in physical properties is evidenced. By proper tuning of the implantation parameters, an enhanced resistivity up to several orders of magnitude is achieved at room temperature. These results offer a new playground for the optimization of oxide-based spintronic and electronic devices.