SKM 2021 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 19: Poster Session IV
HL 19.9: Poster
Donnerstag, 30. September 2021, 13:30–16:30, P
Atomic Structure of Antiphase Domains on GaP/Si(100):As — Dominik Bratek1, •Peter Kleinschmidt1, Manali Nandy1, Oliver Supplie1,2, Agnieszka Paszuk1, and Thomas Hannappel1 — 1Institut für Physik, Grundlagen von Energiematerialien, Technische Universität Ilmenau, 98693 Ilmenau, Deutschland — 2Institut für Physik, Humboldt-Universität zu Berlin, Newtonstraße 15, 12489 Berlin, Deutschland
We have investigated the atomic structure of antiphase domains on GaP(100) on As-terminated Si(100) by scanning tunneling microscopy (STM). Thin GaP layers of 5 nm and 10 nm thickness were deposited on predominately double atomic layer stepped, As-terminated Si(100)-substrates by metalorganic vapor phase epitaxy. Small residuals of the intermediate steps on the substrate lead to the formation of minority antiphase domains in the epitaxial GaP. We show that these antiphase domains extend parallel to the step edges of the substrate. In numerous locations, small residual antiphase domains are embedded in trenches parallel to these step edges, and in other locations only the trenches remain, suggesting that these trenches are residuals of overgrown antiphase domains. Our STM measurements reveal the atomic structure of the antiphase boundaries, which varies substantially: some of these boundaries are just characterized by a half bi-layer step, whereas deep trenches are also frequently observed.