SKM 2021 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 23: Focus Session: Highlights of Materials Science and Applied Physics III (joint session DS/HL)

HL 23.4: Talk

Friday, October 1, 2021, 12:00–12:15, H1

Study of annealing effect on RF-sputtered Bi2Te3 thin films with full figure of merit characterization. — •Gyuhyeon Park, Maksim Naumochkin, Kornelius Nielsch, and Heiko Reith — Leibniz Institute for Solid State and Materials Research Dresden (IFW Dresden), Institute for Metallic Materials, Helmholtzstrasse 20, 01069 Dresden, Germany

Thermoelectric (TE) devices enable the direct conversion of heat into electricity and vice versa. The demand of micro TE harvesting or Peltier cooling devices for application in autonomous sensor systems required for the internet of things (IoT) will prospectively drastically increase in the coming years. Such microdevices are typically fabricated using electrodeposition or physical vapor deposition, where the successful optimization of the thermoelectric figure of merit, zT, which is the key enabler for the introduction of these devices to application. Accordingly, thin film fabrication methods and material investigation are of high interest. In this study, we report on the thermoelectric characterization of RF sputtered n-Bi2Te3 thin films with various thicknesses. For the in-plane Seebeck coefficient, Hall coefficient, electrical, and thermal conductivity measurement a thin film analyzer (TFA) has been used. We will discuss the influence of temperature effects on the transport properties, including in-situ annealing experiments and the relation to the structure, grain size, and chemical composition which was analyzed with XRD, SEM and EDX.