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HL: Fachverband Halbleiterphysik

HL 3: Poster Session I

HL 3.11: Poster

Montag, 27. September 2021, 10:00–13:00, P

Electrical Investigation of Thin ZrSe₃-Films — •Lars Thole¹, Sonja Locmelis², Christopher Belke¹, Peter Behrens², and Rolf J. Haug¹ — ¹Institut für Festkörperphysik, Leibniz Universität Hannover, 30167 Hannover, Germany — ²Institut für Anorganische Chemie, Leibniz Universität Hannover, 30167 Hannover, Germany

In recent years, 2D materials have garnered a lot of attention. Particularly graphene and transition metal dichalcogenides have been researched extensively [1]. However, there is a continuous interest in different groups of 2D materials because of their potential for new physics. Among these, the transition metal trichalcogenides (TMTC) include a lot of materials showing extraordinary properties [2].

We want to present our research on the TMTC zirconium triselenide (ZrSe₃) which we synthesized by a chemical transport method, exfoliated into thin flakes and then contacted by using e-beam lithography. It was possible to determine characteristics similar to that of the bulk material, even in thin layers down to 9 nm. Temperature dependent measurements give a value of about 0.6 eV for the band gap. Looking at the case of infinite thickness by comparing samples with different thicknesses a mean free path for the bulk material was determined. Thin flakes showed a degradation behavior under ambient condition which was investigated in more detail, showing a growth over several weeks. Furthermore, thin-film transistors show n-type doping when operated with a gate voltage.

[1] A. K. Geim, I. V. Grigorieva, Nature, 499, 419-425 (2013).

[2] J. O. Island et al., 2D Materials, 4, 0220033 (2017).