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HL: Fachverband Halbleiterphysik

HL 3: Poster Session I

HL 3.24: Poster

Montag, 27. September 2021, 10:00–13:00, P

InGaAs Based Resonant Tunnelling Diodes By GSMBE — •Begum Yavas Aydin, Sven Höfling, Fauzia Jabeen, and Lukas Worschech — Technische Physik, University of Würzburg, Am Hubland, D-97074 Würzburg, Germany

Resonant Tunneling Diodes (RTD) are promising devices for various applications such as GHz to THz oscillators and high sensitivity photon detectors due to their ultra-high frequency, ultra-high-speed, and low power. High current density (JP) and high peak-to-valley current ratio (PVCR) are required for high-speed RTDs. To obtain high current densities and PVCR, structural parameter's dependence on barrier thickness, the spacer thickness of emitter and collector play key role.

InGaAs-based RTDs are grown by gas sources molecular beam epitaxy (GSMBE). High current density can be achieved by a thin barrier with a high electron transmission [1]. Peak current density reached 75 kA/cm2 with 1.5 nm thin AlAs barriers. Three RTD samples differing in In0.53Ga0.47As collector spacer thickness of 5, 10, and 25 nm are grown. The highest JP of 500 kA/cm2 with PVCR 5.7 is achieved at room temperature for a 1.5 nm thin AlAs barrier and an asymmetric spacer layer.

[1] Moise, T. S., et al. J. of Appl. Phys. 78.10 (1995)

[2] Kanaya, H., et al. J. of Infrared, Millimeter, Terahertz Waves 35.5 (2014)