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SKM 2021 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 5: 2D semiconductors and van der Waals heterostructures I (joint session HL/DS)

HL 5.1: Invited Talk

Monday, September 27, 2021, 13:30–14:00, H4

The role of chalcogen vacancies for atomic defect emission in MoS2Elmar Mitterreiter1, Bruno Schuler2, Daniel Hernangómez-Pérez3, Julian Klein4, Jonathan Finley1, Sivan Refaely-Abramson3, Alexander Holleitner1, Alexander Weber-Bargioni5, and •Christoph Kastl11Walter Schottky Institute, TU Munich — 2nanotech@surfaces Laboratory, Empa — 3Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science — 4Massachusetts Institute of Technology — 5Molecular Foundry, Lawrence Berkeley National Laboratory

The microscopic understanding of defect-related modifications in 2D materials requires correlation between atomic structure and resulting macroscopic electronic, optical or excitonic properties. Combing controlled defect engineering with optical spectroscopy as well as atomic imaging and ab-initio theory, we identify the optical signature of pristine chalcogen vacancies in single layer MoS2. [1] Vacancies introduce a narrow optical emission, markedly different from previously observed broad luminescence bands. Comparing annealed vs. He-ion treated MoS2, we establish that the recently discovered single-photon emitters in He-ion irradiated MoS2 originate from chalcogen vacancies. Using focused ion beam irradiation, the latter can be created site-selectively [2] with a spatial precision better than 10 nm [3], which is important for a prospective integration of defect-based single photon emitters into quantum photonic circuits. [1] E. Mitterreiter et al., Nat. Commun. 12, 3822 (2021). [2] J. Klein et al. ACS Photonics 8, 669-677 (2021). [3] E. Mitterreiter et al., Nano Lett. 20, 4437 (2020).

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