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HL: Fachverband Halbleiterphysik

HL 7: Semiconductor Lasers

HL 7.1: Invited Talk

Tuesday, September 28, 2021, 10:00–10:30, H4

Ultrafast Spin-LasersNatalie Jung1, Markus Lindemann1, Tobias Pusch2, Rainer Michalzik2, Martin R. Hofmann1, and •Nils C. Gerhardt11Photonics and Terahertz Technology, Ruhr-University Bochum, 44780 Bochum, Germany — 2Institute of Functional Nanosystems, Ulm University, 89081 Ulm, Germany

Current-driven intensity-modulated semiconductor lasers are key optical sources for short-distance data transmission, but their modulation bandwidth is usually limited to values below 50 GHz. By exploiting the coupling between carrier spin and light polarization in semiconductor spin-lasers, the modulation frequencies can be increased to values above 200 GHz [1]. These high frequencies are achievable by increasing the resonance frequency of the coupled spin-photon system using strong birefringence in the laser cavity. Birefringent spin-lasers are capable to provide polarization modulation bandwidths and digital data transmission rates of more than 240 GHz and 240 Gbit/s respectively [1]. In contrast to intensity modulation in conventional lasers, polarization modulation in spin-lasers is largely independent of the pumping level and less sensitive to temperature increase [2]. This makes spin-lasers perfect candidates for future ultrafast communication systems as well as for many other emerging applications such as radio-over-fiber [3], neuromorphic computing [4] or THz generation [5].

[1] M. Lindemann et al., Nature 568, 212 (2019). [2] M. Lindemann et al., AIP Adv. 10, 035211 (2020). [3] N. Yokota et al., IEEE Photon. Technol. Lett. 33, 297 (2021). [4] K. Harkhoe et al., Appl. Sci. 11, 4232 (2021). [5] M. Drong et al., Phys. Rev. Appl. 15, 014041 (2021).

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