SKM 2021 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 7: Semiconductor Lasers
HL 7.3: Talk
Tuesday, September 28, 2021, 10:45–11:00, H4
Linewidth transition at the laser threshold of quantum-well nanolasers — •J. Buchgeister1, M. L. Drechsler1, F. Lohof1, C. Gies1, F. Jahnke1, A. Koulas-Simos2, K. Laiho2, G. Sinatkas2, S. Reitzenstein2, T. Zhang4, J. Xu4, C.-Z. Ning3,4, and W. W. Chow5 — 1Universität Bremen, Germany — 2Technische Universität Berlin, Germany — 3Arizona State University, USA — 4Tsinghua University, China — 5Sandia National Laboratories, USA
Semiconductor nanolasers as small-scale sources of coherent light have become increasingly important for applications in the data and medical industry for their size, power-efficiency, and modulation speed. Determining the presence of lasing, however, is challenging due to the near-thresholdless behaviour of ultra-efficient devices, which requires going beyond input-output characteristics. The research presented here focuses on a quantum-optical study of a silver-coated InGaAsP nanolaser, accompanied by a full quantum-mechanical semiconductor laser theory; this gives access to the time-resolved single-photon and zero-time-delay two-photon correlation function that holds information about the photon statistics, allowing to identify the onset of coherent emission with confidence. Our theoretical model can match the experimentally obtained data using a single set of realistic parameters that holds not just in a stationary regime, but also when focusing on the temporal dynamics for the investigation of the coherence time. This procedure presents a comprehensive strategy for the identification of lasing while being extensible to those gain materials requiring a more pronounced focus on quantum-material aspects, like TMDCs.