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HL: Fachverband Halbleiterphysik
HL 7: Semiconductor Lasers
HL 7.4: Talk
Tuesday, September 28, 2021, 11:00–11:15, H4
Electro-optical switching of a topological polariton laser — •Philipp Gagel1, Tristan H. Harder1, Simon Betzold1, Oleg A. Egorov2, Johannes Beierlein1, Holger Suchomel1, Monika Emmerling1, Adriana Wolf1, Ulf Peschel2, Sven Höfling1, Christian Schneider3, and Sebastian Klembt1 — 1Technische Physik, Wilhelm-Conrad-Röntgen-Research Center for Complex Material Systems, and Würzburg-Dresden Cluster of Excellence ct.qmat, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany — 2Institute of Condensed Matter Theory and Solid State Optics, Abbe Center of Photonics, Friedrich-Schiller-Universität Jena, D-07743, Germany — 3Institute of Physics, University of Oldenburg, D-26129 Oldenburg, Germany
Here we implement a topological domain boundary defect in an orbital Su-Schrieffer-Heeger geometry by etching coupled pillars into an AlGaAs based microcavity. We show exciton-polariton lasing from the topologically non-trivial domain boundary defect in the bandgap of the P-bands under optical excitation. A gold back and top contact is used to apply a reverse bias to the structure allowing to tune the exciton-polariton detuning due to a shift in the energetic position of the exciton based on the quantum confined Stark effect. This way, we demonstrate control of the energetic position polariton condensation and lasing takes place. Furthermore, we show that this effect can be used to switch the polariton lasing from the topological defect on and off. These findings are an important step towards the realization of an electrically driven, topological polariton laser.