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SKM 2021 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 8: Poster Session II

Dienstag, 28. September 2021, 10:00–13:00, P

Topics:
- Functional semiconductors for renewable energy solutions
- Heterostructures, interfaces and surfaces
- Nitrides: Preparation and characterization
- Organic semiconductors
- Oxide semiconductors
- Perovskite and photovoltaics
- When theory meets experiment: Hybrid halide perovskites for applications beyond solar

10:00 HL 8.1 Design optimization for bright electrically-driven quantum dot single-photon sources emitting in telecom O-bandSergey Blokhin, Mikhail Bobrov, Nikolai Maleev, •Jan Donges, Lukas Bremer, Alexey Blokhin, Alexey Vasil'ev, Alexander Kuzmenkov, Evgenii Kolodeznyi, Vitaly Shchukin, Nikolay Ledentsov, Stephan Reitzenstein, and Victor Ustinov
10:00 HL 8.2 Examination of time-energy-entanglement on the biexciton-exciton-system under resonant two-photon driving via Franson interferometry — •Marcel Hohn, Matthias Kunz, Samir Bounouar, and Stephan Reitzenstein
10:00 HL 8.3 Focused ion beam implantation of rare-earth ions in semiconductor nanostructures — •Christian Düputell, Arne Ludwig, and Andreas D. Wieck
10:00 HL 8.4 Using a novel scanning probe technique to strongly couple a single quantum dot to a tunable plasmonic nanogap antenna at room temperature — •Michael A. Becker, Hsuan-Wei Liu, Korenobu Matsuzaki, Randhir Kumar, Stephan Götzinger, and Vahid Sandoghdar
10:00 HL 8.5 Capacitance-voltage spectroscopy on quantum dots without electronic wetting layer states — •Ismail Bölükbasi, Sven Scholz, Andreas D. Wieck, and Arne Ludwig
10:00 HL 8.6 Surface Morphology of Self-Assembled InAs/GaAs Quantum Dots and Pattern Definition Layers grown by Molecular Beam Epitaxy — •Peter Zajac, Nikolai Bart, Andreas D. Wieck, and Arne Ludwig
10:00 HL 8.7 Wafer Scale Density Modulation of Self-Assembled Quantum Dots by Epitaxial Surface Roughness Control — •Nikolai Bart, Nikolai Spitzer, Peter Zajac, Marcel Schmidt, Andreas D. Wieck, and Arne Ludwig
10:00 HL 8.8 Semiconductor nanophotonic light sources with site- and number- controlled quantum dots for the investigation of collective effects — •Ching-Wen Shih, Jan Große, Imad Limame, Chirag Palekar, Yuhui Yang, Lasse Kosiol, Sebastian Krüger, and Stephan Reitzenstein
10:00 HL 8.9 A Master Equation centered foundation for an open-source project for quantitative simulation of the transition dynamics in finite state quantum systems. — •Arn Baudzus, Andreas Wieck, and Arne Ludwig
10:00 HL 8.10 Spatially resolved multi-probe electrical characterization of GaAs-based nanowire structures — •Juliane Koch, Lisa Liborius, Peter Kleinschmidt, Werner Prost, and Thomas Hannappel
10:00 HL 8.11 Examination of self-assembled quantum dots in a density-modulated pattern with capacitance-voltage and photolulminescence spectroscopy — •Nikolai Spitzer, Nikolai Bart, Arne Ludwig, and Andreas Wieck
10:00 HL 8.12 Design and fabrication of waveguide-based nanobeam cavity for on-chip single photon source — •Yuhui Yang, Uğur Meriç Gür, Johannes Schall, Ronny Schmidt, Arsenty Kaganskiy, Michael Mattes, Samel Arslanagić, Stephen Reitzenstein, and Niels Gregersen
  10:00 HL 8.13 The contribution has been withdrawn.
10:00 HL 8.14 Metamorphic buffer layer based single-photon sources for application in quantum telecommunications — •Piotr Andrzej Wronski, Sven Höfling, and Fauzia Jabeen
10:00 HL 8.15 Purcell-enhanced single-photon emission from a strain-tunable quantum dot in a cavity-waveguide device — •Florian Hornung, Stefan Hepp, Stephanie Bauer, Erik Hesselmeier, Xueyong Yuan, Michael Jetter, Simone Luca Portalupi, Armando Rastelli, and Peter Michler
10:00 HL 8.16 Full Wafer Property Control of Local Droplet Etched GaAs Quantum Dots — •Hans-Georg Babin, Nikolai Bart, Marcel Schmidt, Andreas D. Wieck, and Arne Ludwig
10:00 HL 8.17 Changes of transport properties in individual carbon nanotubes due to MOF growth — •Marvin J. Dzinnik, Benedikt Brechtken, Hendrik A. Schulze, Adrian Hannebauer, Enes Akmaz, Peter Behrens, and Rolf J. Haug
10:00 HL 8.18 Optimal Bandwidth in Quantum Event Measurements Using Post-Processing — •Jens Kerski, Hendrik Mannel, Pia Lochner, Eric Kleinherbers, Annika Kurzmann, Arne Ludwig, Andreas D. Wieck, Jürgen König, Axel Lorke, and Martin Geller
10:00 HL 8.19 Topological superconductivity in (3D) topological insulator-based hybrid devices — •Dennis Heffels, Declan Burke, Malcolm R. Connolly, Peter Schüffelgen, Kristof Moors, and Detlev Grützmacher
10:00 HL 8.20 Deterministically fabricated GaAs quantum dot based single-photon sources with emission at Cs wavelengths — •Monica Pengerla, Lucas Bremer, Jin Dong Song, Sven Rodt, and Stephan Reitzenstein
10:00 HL 8.21 Structural and Optical Properties of Hexagonal Pyramids Containing GaInN Quantum dots Formed by Wet Etching of GaInN/GaN Quantum Wells — •Samar Hagag, Sidikejiang Shawutijiang, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter
10:00 HL 8.22 Kondo effect in a few-electron quantum dot — •Olfa Dani, Johannes C. Bayer, Timo Wagner, Gertrud Zwicknagl, and Rolf J. Haug
10:00 HL 8.23 Theoretical description of higher excited quantum dot states in an external magnetic field — •Jan Kaspari, Matthias Holtkemper, Tilmann Kuhn, and Doris Reiter
10:00 HL 8.24 Ultra-high quality factor Ta2O5-on-insulator microring resonators with cryogenic temperature stability — •Julian Rasmus Bankwitz, Martin A. Wolff, Adrian Abazi, Alexander Eich, and Carsten Schuck
10:00 HL 8.25 Magnetic Field Dependence of the Auger Recombination Rate in a Self-Assembled Quantum Dot — •Fabio Rimek, Hendrik Mannel, Marcel Ney, Arne Ludwig, Andreas D. Wieck, Martin Geller, and Axel Lorke
10:00 HL 8.26 Halogen vacancy migration at a surface of CsPbBr3: Insights from Density Functional Theory — •Raisa-Ioana Biega and Linn Leppert
10:00 HL 8.27 Polarons and Dynamic Disorder in Halide Perovskites: a Tight Binding Approach — •Maximilian. J. Schilcher, Matthew. Z. Mayers, Paul. J. Robinson, David. J. Abramovitch, Liang. Z. Tan, Andrew. M. Rappe, David. R. Reichman, and David. A. Egger
10:00 HL 8.28 Disorder in halide perovskites: anharmonicity and dynamically shortened correlations — •Christian Gehrmann and David A. Egger
10:00 HL 8.29 Epitaxial BaSnO3 thin films without extended defects on lattice matched LaInO3 substrates — •Daniel Pfützenreuter, Zbigniew Galazka, Robert Schewski, Klaus Irmscher, Martin Albrecht, and Jutta Schwarzkopf
10:00 HL 8.30 β-Ga2O3 material for vertical power devices: challenges to the epitaxy process — •Ta-Shun Chou, Saud Bin Anooz, Raimund Grüneberg, Vi Tran Thi Thuy, Zbigniew Galazka, Klaus Irmscher, Palvan Seyidov, Martin Albrecht, and Andreas Popp
10:00 HL 8.31 Influence of group III dopants on the properties of SnO(001) films grown via plasma-assisted molecular beam epitaxy — •Kingsley Egbo, Georg Hoffmann, Andrea Ardenghi, Alexandra Papadogianni, Jonas Laehnemann, and Oliver Bierwagen
10:00 HL 8.32 The role of Sr deficiency in SrTiO3 thin films grown by metal-organic vapor phase epitaxy — •Aykut Baki, Julian Stöver, Tobias Schulz, Houari Amari, Carsten Richter, Jens Martin, Klaus Irmscher, Martin Albrecht, and Jutta Schwarzkopf
10:00 HL 8.33 Doping of β-Ga2O3 in a plasma assisted MBE using a SiO source. — •Andrea Ardenghi, Georg Hoffmann, Oliver Bierwagen, Piero Mazzolini, Andreas Falkenstein, and Manfred Martin
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