SKM 2021 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 8: Poster Session II

HL 8.14: Poster

Dienstag, 28. September 2021, 10:00–13:00, P

Metamorphic buffer layer based single-photon sources for application in quantum telecommunications — •Piotr Andrzej Wronski, Sven Höfling, and Fauzia Jabeen — 1Technische Physik, University of Würzburg and Wilhelm-Conrad-Röntgen-Research Center for Complex Material Systems, Am Hubland, D-97074 Würzburg, Germany

Obtaining single-photon sources requires them not only to characterize by low FSS, low g(2)(0), and high emission rate, it is also essential for them to be built-in telecommunication network. Ideally, obtained sources should emit at spectral range aligned with the lowest attenuation window (C-band) for silicon fibers. So far, such emitters are reported only on InP, but the low refractive contrast of lattice-matched materials makes it difficult to obtain complete photonic structures with efficient outcoupling.

Metamorphic buffer layer on GaAs substrate as a base for InAs QDs leads to strain relaxation and induces required emission shift. Past attempts in this matter lacked low surface roughness required for development of top DBRs and fabricating micropillars

By implementing our approach of introducing a stepwise increase of "In" composition inside a digitally alloyed superlattice, we can observe a shift of emission wavelength, improvement of surface quality, and observation of single-photon emission in 1550 nm spectral range from InAs QDs grown on GaAs (001) substrate, confirmed by autocorrelation experiments. The incorporation of AlAs/GaAs DBRs improved the emission intensity.