SKM 2021 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 8: Poster Session II

HL 8.20: Poster

Tuesday, September 28, 2021, 10:00–13:00, P

Deterministically fabricated GaAs quantum dot based single-photon sources with emission at Cs wavelengths — •Monica Pengerla¹, Lucas Bremer¹, Jin Dong Song², Sven Rodt¹, and Stephan Reitzenstein¹ — ¹Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin, Germany — ²Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea

In this work, we investigate GaAs based quantum dot (QD) single photon sources at 894 nm. The goal is to control the emission of single photon sources time delay with Cs vapor. To increase the photon extraction efficiency, the device design includes a gold mirror on back side. Numerical simulations reveal a photon extraction efficiency of approximately 52% with numerical aperture NA = 0.4. The flip chip gold bonding process results in a thin QD membrane, which includes wet etching of AlGaAs and GaAs layers. The preliminary low temperature micro photoluminescence and cathodoluminescence results of Au bonded samples are fair enough to pursue further device fabrication steps. With In-situ electron-beam lithography (EBL), QDs at target wavelength, based on their intensity can be selected prior to the structure patterning. We are planning to deterministically integrate quantum dots at 894 nm into mesa and one ring structure with in-situ electron beam lithography. Later, the emitted single photon properties of fabricated structures will be studied with photon autocorrelation measurements.