SKM 2021 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 8: Poster Session II

HL 8.21: Poster

Tuesday, September 28, 2021, 10:00–13:00, P

Structural and Optical Properties of Hexagonal Pyramids Containing GaInN Quantum dots Formed by Wet Etching of GaInN/GaN Quantum Wells — •Samar Hagag, Sidikejiang Shawutijiang, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter — Technische Universität Braunschweig, Institut f. Angewandte Physik, 38106 Braunschweig,Germany

We present first results from our studies of the structural and optical properties of hexagonal pyramids containing GaInN Quantum Dot(QD)-like structures located close to the tip of pyramids with a smooth side facets of the type (1-10-1) and very sharp tips obtained through the wet chemical etching of GaInN/GaN Quantum Well(QW)structures grown on N-face GaN. The photoluminescence spectrum of the QD’s shows the intuitive additional quantum confinement manifested by a blue shift of the photoluminescence peak and narrow emission lines have been observed in the microphotoluminescence spectra. A comparison between the peak energy separation observed in the microphotoluminescence spectrum of pyramidal structures containing several quantum disks and calculations of the quantization energy of the quantum disks shows that the top most QD has a diameter of 18.5nm. In a further attempt to control the position and size of the hexagonal pyramids a Focused Ion Beam-deposited etch mask was used and regular array of pyramidal structures were formed. While the QD thickness and indium contents are given by the QW structure,an optimization of the etching process to control the pyramid size is required to enable the control of the QD lateral extension.