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HL: Fachverband Halbleiterphysik

HL 8: Poster Session II

HL 8.29: Poster

Dienstag, 28. September 2021, 10:00–13:00, P

Epitaxial BaSnO3 thin films without extended defects on lattice matched LaInO3 substrates — •Daniel Pfützenreuter, Zbigniew Galazka, Robert Schewski, Klaus Irmscher, Martin Albrecht, and Jutta Schwarzkopf — Leibniz-Institut für Kristallzüchtung, Max-Born-Str. 2, 12489 Berlin, Germany

BaSnO3 is a semiconducting perovskite material offering an electron mobility of 320 cm2/Vs at a carrier density of 8E19 cm-3 at room temperature in a bulk crystal. Epitaxial thin films however, always have a much lower electron mobility, which is ascribed to a high density of threading dislocations emerging in the films as a consequence of a large lattice mismatch between substrate and film.

LaInO3 crystals with (110) surface orientations were applied as a novel orthorhombic substrate for the epitaxial growth of BaSnO3 thin films due to its negligible lattice mismatch. We revealed by means of reflection high energy electron diffraction, energy dispersive x-ray analysis and atomic force microscopy that a slight Ba-doping in the LaInO3 substrates helps to stabilize the substrate surface at elevated temperatures and under reducing atmosphere, which are the typically used pulsed laser deposition conditions for the growth of BaSnO3 thin films. Transmission electron microscopy measurements confirm the growth of fully strained BaSnO3 thin films without extended defects on LaInO3:Ba substrates. Temperature dependent Hall-effect measurements of a BaSnO3 film doped with 0.5 % La exhibit a Hall-mobility of 69 cm2/Vs at room temperature and 99 cm2/Vs at 20 K at a constant charge carrier density of 3.8E19 cm-3.