SKM 2021 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 8: Poster Session II

HL 8.30: Poster

Tuesday, September 28, 2021, 10:00–13:00, P

β-Ga2O3 material for vertical power devices: challenges to the epitaxy process — •Ta-Shun Chou, Saud Bin Anooz, Raimund Grüneberg, Vi Tran Thi Thuy, Zbigniew Galazka, Klaus Irmscher, Palvan Seyidov, Martin Albrecht, and Andreas Popp — Leibniz-Institut für Kristallzüchtung, Berlin, Germany

β-Ga2O3 is a promising ultra-wide bandgap (~4.8 eV) semiconductor material. A breakdown field strength up to 8 MV/cm is expected from theoretical calculation, which makes it attractive for power electronic applications and a competitor to SiC and GaN. Especially a vertical architecture for β-Ga2O3-based transistors can exploit the high potential of this material and will benefit from a low on-resistance at a given breakdown voltage in combination with less power losses within a transistor switching operation. To fulfill the requirements of the vertical device, extremely low doped homoepitaxial thin films with thicknesses of several um and high crystallinity are necessary.

In this contribution, we present the growth development to achieve step-flow β-Ga2O3 grown layer by MOVPE on Mg-doped β-Ga2O3 (100) substrates with a thickness above 1 um by applying a high growth rate. This improvement can be related to the possible formation of a Ga adlayer which is widely reported already for the GaN system. In addition low, Si doping concentrations down to and below 1E17 cm^-3 were demonstrated while maintaining mobilities comparably high as previous results based on low growth rate and low thickness layers. The developed epitaxy process is a key enabler for the growth of (100) β-Ga2O3 material for vertical power device applications.